MRF8P20165WHSR3【PDF 1/16 页】FET RF LDMOS 28V 550MA NI780S4

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MRF8P20165WHR3 MRF8P20165WHSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for base station applications with wide instantaneous bandwidth

requirements covering frequencies from 1880 to 2025 MHz.

Typical Doherty Single--Carrier W--CDMA Performance: VDD

=28Volts,

IDQA

= 550 mA, VGSB

=1.3Vdc,Pout

= 37 Watts Avg., IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB

@ 0.01% Probability on CCDF.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

1930 MHz

16.1

47.0

7.1

--27.7

1960 MHz

16.3

47.7

7.1

--29.7

1995 MHz

16.3

46.0

7.0

--33.3

Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW

Output Power (2 dB Input Overdrive from Rated Pout)

(1)

Typical Pout

@ 3 dB Compression Point

190 Watts

Features

Designed for Wide Instantaneous Bandwidth Applications. VBWres

100 MHz.

Designed for Wideband Applications that Require 65 MHz Signal Bandwidth

Production Tested in a Symmetrical Doherty Configuration

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Large--Signal Load--Pull Parameters and Common

Source S--Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

RoHS Compliant

NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,

13 inch Reel. For R5 Tape and Reel option, see p. 15.

NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,

13 inch Reel. For R5 Tape and Reel option, see p. 15.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

--65 to +150

°C

Case Operating Temperature

125

°C

Operating Junction Temperature

(2)

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 37 W CW, 28 Vdc, IDQA

= 550 mA, VGSB

= 1.3 Vdc, 1960 MHz

Case Temperature 114°C, 160 W CW, 28 Vdc, IDQA

= 550 mA, VGSB

= 1.3 Vdc, 1960 MHz

RθJC

0.79

0.53

°C/W

1. P3dB = Pavg

+ 7.0 dB where Pavg

is the average output power measured using an unclipped W--CDMA single--carrier input signal where

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

2. Continuous use at maximum temperature will affect MTTF.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF8P20165WH

Rev. 0, 4/2011

Freescale Semiconductor

Technical Data

1930--1995 MHz, 37 W AVG., 28 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFETs

MRF8P20165WHR3

MRF8P20165WHSR3

CASE 465H--02, STYLE 1

NI--780S--4

MRF8P20165WHSR3

CASE 465M--01, STYLE 1

N I -- 7 8 0 -- 4

MRF8P20165WHR3

(Top View)

GSA

31RFoutA/VDSA

Figure 1. Pin Connections

GSB

42RFoutB/VDSB

RFinA/V

RFinB/V

Freescale Semiconductor, Inc., 2011.

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